| 半导体器件用显微红外热成像技术原理及应用 |
| Principles and Applications of Infrared Micro-thermography Technique for Semiconductor Devices |
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| 中文摘要: |
| 对用于半导体器件温度测量的显微红外热成像技术的原理及应用情况进行了回顾。显微红外热成像技术基于普朗克黑体辐射定律，依靠测量被测件表面发出的红外辐射确定温度。在中红外波段下，该技术具备最高1.9μm的空间分辨力，配合以发射率修正技术，能够测量非黑体的微小半导体器件的真实温度。该技术具备稳态温度成像测量能力、连续毫秒级甚至微秒级的高时间分辨力成像测量能力和脉冲条件下器件温度测量能力。在各类半导体器件不同工作条件的温度测量方面得到了广泛的应用。 |
| 英文摘要: |
| The principles and applications of infrared micro-thermography technique for semiconductor temperature testing were reviewed. This technique is based on Planck blackbody radiance law, the infrared radiance was measured and then the temperature was calculated. Under the mid-infrared waveband, the highest spatial resolution had been realized, corresponding with the emissivity correction, infrared micro-thermography technique can measure the truth temperature of micro semiconductor devices. This technique was capable of measuring stable temperature thermography, continuous dynamic temperature thermography with millisecond level or even microsecond level temporal resolution, and temperature under pulsed conditions. Infrared micro-thermography has been used widely on temperature testing for varies kinds of semiconductor devices under varies conditions. |
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| 中文关键词: 半导体器件 显微红外热成像 测温 发射率修正 空间分辨力 时间分辨力 |
| 英文关键词:semiconductor devices infrared micro-thermography temperature testing emissivity correction spatial resolution temporal resolution |
| 基金项目: |
| DOI：10.11823/j.issn.1674-5795.2018.06.08 |
| 引用本文：翟玉卫，郑世棋，刘岩，梁法国.半导体器件用显微红外热成像技术原理及应用[J].计测技术,2018,38(6):. |
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