| 半导体功率器件测试用脉冲高压源的设计与实现 |
| Design and implementation of pulse high⁃voltage source for testing semiconductor power devices |
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| 中文摘要: |
| 为满足功率半导体器件参数测量中对脉冲高压源输出脉冲幅值和宽度的需求，基于Marx发生器原理设计了一脉冲幅值和宽度连续可调的脉冲高压源，用以对功率半导体器件参数的快速测量。该脉冲高压源通过改进Marx发生器基本结构，采用双电源充电模式，减小了脉冲发生器的充电时间；采用同步放电电路，提高了脉冲电压的输出精度；在此基础上，采用快恢复二极管隔离每级Marx电路，降低了充电损耗。通过控制双电源充电电压和放电回路中固态开关导通时间，实现了输出脉冲电压幅值和宽度连续可调。实验结果表明，该脉冲高压源在脉冲幅值0~8000 V和脉冲宽度200~1000 μs之间连续可调，上升时间为35 ns，可满足功率半导体器件参数快速测量的需求。 |
| 英文摘要: |
| In order to meet the requirement of output pulse amplitude and width of high?voltage pulse source in power semiconductor device parameter measurement, a pulse high?voltage source with continuously adjustable pulse amplitude and width is designed based on the principle of Marx generator, which can be used for fast measurement of power semiconductor device parameters. The pulse high?voltage source reduces the charging time of the pulse generator by improving the basic structure of the Marx generator and using the dual power charging mode. The synchronous discharge circuit is adopted to improve the output precision of the pulse voltage. On this basis, fast recovery diode is used to isolate each stage of the Marx circuit to reduce the charging loss. By controlling the charging voltage of the dual power supply and the conduction time of the solid?state switch in the discharge circuit, the amplitude and width of the output pulse voltage can be continuously adjusted. The experimental results show that the pulse high?voltage source can be continuously adjusted between the pulse amplitude of 0~8000 V and the pulse width of 200~1000 μs, and the rise time is 35 ns, which can meet the needs of fast measurement of power semiconductor device parameters. |
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| 中文关键词: 功率半导体器件 测试 Marx 脉冲高压源 |
| 英文关键词:power semiconductor devices testing Marx pulse high voltage source |
| 基金项目: |
| DOI：10.11823/j.issn.1674-5795.2022.04.10 |
| 引用本文：高子兴, 赵昭, 李洁, 沙长涛, 高峰.半导体功率器件测试用脉冲高压源的设计与实现[J].计测技术,2022,(4):. |
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